| PART |
Description |
Maker |
| 2SD2558 |
5 A, 200 V, NPN, Si, POWER TRANSISTOR
|
|
| MG50Q2YS9 MG100M2CK1 MG200H2CK1 GT60M103 MG400H1FK |
50 A, 1200 V, N-CHANNEL IGBT
100 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
200 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
400 A, 600 V, N-CHANNEL IGBT
|
|
| BU806 |
8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS
|
ON Semiconductor
Motorola Inc
Motorola, Inc
|
| JANTX2N5660 JANTX2N5661 JANTX2N5662 JANTX2N5663 JA |
NPN POWER SILICON TRANSISTOR 2 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-66
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| BU406 |
7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS
|
Motorola, Inc
ON Semiconductor
|
| BUP52.MODR1 |
70 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AE HERMETIC SEALED, METAL, TO-3, 2 PIN
|
TT electronics Semelab, Ltd.
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| BSV52LT1 BSV52L BSV52LT1-D BSV52LT1/D |
Switching Transistor (NPN Silicon)
Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23
|
ON Semiconductor
|
| 2N4123RLRM 2N412308 |
General Purpose Transistors NPN Silicon 200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ON Semiconductor
|
| 2N3904RLRPG 2N3904H 2N390310 |
General Purpose Transistors NPN Silicon 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ON Semiconductor
|
| SF2N4924 2N4924 SF_2N4924 2N6462 |
Bipolar NPN Device 200 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
|
